Abstract
The effect of hydrogen absorption on the electrical resistance and activation energy of FeTi thin films was investigated. The samples were prepared by oblique deposition at different angles ( θ = 0°, 30°, 45°, 60° and 75°) simultaneously. The resistance and activation energy of FeTi films increases with the angle of deposition. The activation energy of FeTiH x films is found to be higher than FeTi films for the same deposition angle and also increases with angle of deposition. The activation energy of hydrogenated samples is found to increase with hydrogen charge and discharge cycling.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
