Abstract
AbstractWe investigated the electrical properties of Mg‐doped Ga1–x Inx N grown on an a ‐plane template. High‐hole‐concentration p‐type Mg‐doped Ga1–x Inx N films with an InN molar fraction of 0.17 were fabricated on sidewall‐epitaxial‐lateral overgrown a ‐plane GaN grown on an r ‐plane sapphire substrate by MOVPE. Variable‐temperature Hall effect measurement showed that a maximum hole concentration of 1.4 × 1019 cm–3 for x = 0.17 was reproducibly achieved at room temperature. The activation energy of Mg acceptors in Mg‐doped a ‐plane Ga0.83In0.17N was found to be as low as 48 meV. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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