Abstract
• Au-induced crystallization of a-SiO 0.2 films was carried out at 210–275 °C. • The activation energy for AuIC of a-SiO 0.2 was determined for the first time to be 1.7 ± 0.1 eV. • Raman spectroscopy revealed the improvement of crystalline properties of poly-Si films with decreasing annealing temperature. • XRD revealed the formation of poly-Si with (1 1 1) crystallographic orientation. Polycrystalline silicon (poly-Si) films were fabricated by gold-induced crystallization (AuIC) of amorphous silicon suboxide (a-SiO x , x = 0.2) films at temperatures of 210–275 °C. The films were studied by in situ optical microscopy, Raman spectroscopy, and X-ray diffractometry. The activation energy for AuIC of a-SiO 0.2 was determined for the first time to be 1.7 ± 0.1 eV.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
