Abstract
The rapid recrystallization of amorphous silicon films utilizing excimer laser crystallization (ELC) is presented. The resulting poly-Si films are characterized by Raman spectroscopy. Polycrystalline silicon (poly-Si) films with higher crystallinity can be realized by a dehydrogenation process before ELC. Raman spectra as a function of various excimer laser energy densities are demonstrated. The crystallinity and residual stress of the poly-Si films are determined and discussed.
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