Abstract
The effect of ultrasonic waves on the spectral sensitivity of solar energy converters based on AlGaAs/GaAs heterostructures has been studied. Ultrasonic treatment of a zinc-doped graded-gap AlxGa1−xAs film leads to the formation of a surface layer sensitive to electromagnetic radiation in the wavelength range λ < 0.551 μm. It is established that this layer is formed as a result of the acoustostimulated inward diffusion of zinc from the surface to the bulk of the graded-gap layer. The observed expansion of the short-wavelength sensitivity range and an increase in the efficiency of nonequilibrium charge carrier collection in AlGaAs/GaAs solar cells are due to improvement of the crystal defect structure and the dopant redistribution under the action of ultrasound.
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