Abstract
The electric field, generated by the propagation of a surface acoustic wave on a piezoelectric crystal, is used as a probing tool to study the transient behavior of deep levels. This field interacts with the free carriers present in the semiconductor resulting in an alteration of the carrier density at the surface of the semiconductor. The rate at which these excess charges are induced at the semiconductor surface, or diminished after the passage of the SAW pulse, can be related to the position and the cross section of the deep levels in the semiconductor. The technique is employed to study deep levels in a GaAs epilayer grown on semi-insulating GaAs substrate. The theoretical analysis of the transient phenomenon is presented along with experimental verification. Due to the analogy to DLTS measurements we refer to this technique as acousto-electric deep-level transient spectroscopy (AEDLTS).
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