Abstract
An acoustic method of the surface potential determination in semiconductors is described. The method is based on the transverse acoustoelectric effect in the layered piezoelectric waveguide-semiconductor structure. The paper presents experimental results of the surface potential investigations obtained after various surface treatments in a GaP:Te (110) single crystal. Strong influence of chemical and mechanical surface treatments upon the surface potential values are observed. The surface potential values obtained by the presented method ranged, approximately, from −0.17 ± 0.01 V up to +0.08 ± 0.01 V. It follows from measurements that the method may give important information about the surface potential of the semiconductor crystals in the high frequency range.
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