Surface Potential Investigations of Indium Phosphate Real Surfaces by Means of Transverse Acoustoelectric Method

Abstract

A method of surface potential determination in semiconductors b y means of the transverse acoustoelectric echect is described. The results of theoreti- cal analysis of the transverse acoustoelectric voltage versus surface potential and dicherent surface electrical parameters in indium phosphate single crys- tals are presented. The experimental results of the surface potential inves- tigations have been obtained after various surface treatments in IranP(110) and InP(100) crystals. A strong influence of the chemical and mechanical surface treatments upon the surface potential values has been observed from the measurements. The surface InP(110) was more sensitive to dicherent sur- face treatments. The changes of the surface potential values were about two times greater for InP(110) than for InP(100) samples. The surface potentials after surface treatments obtained b y the acoustics method were of the range -0.08 (V) to -0.22 (V).