Abstract
It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during current passage redistribution of electroluminescence intensity on the structure surface takes place simultaneously with radiation of acoustic emission. Local (on surface area) fluctuations of electroluminescence intensity are observed together with general degradation of electro-physical parameters.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Semiconductor physics, quantum electronics and optoelectronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.