Abstract
Thin film resistive materials with low temperature coefficients of resistance (TCR) and high sheet resistances are essential for various electronic applications, such as embedded resistors. In this study, Al inserting layers and NiCr resistive layers were sequentially deposited on alumina ceramic substrates via DC magnetron sputtering to fabricate Al/NiCr bilayer resistive materials. The electrical properties of the bilayer films were adjusted by varying the thicknesses of the Al inserting layers and annealing conditions. When the thickness of the Al inserting layer varied from 5 to 7.5 nm, and post-annealing treatments ranging from 200℃ to 400℃ were applied, evident Al-NiCr interdiffusion occurred, forming intermediate layers at the interfaces and oxides on the film surfaces. A mixture of partial crystalline phases and amorphous phases was also observed in the cross-sectional high-resolution transmission electron microscope (HRTEM) images. The formation of intermediate layers and surface oxides and the balance between partial crystalline phases and amorphous phases collectively enhanced the electrical performance of bilayer film resistors, achieving thin film resistors with a remarkably low TCR of −6.61 ppm/K and a sheet resistance of up to 265.95 Ω/sq. By rational design of Al layers, NiCr layers and thermal treatment, thin film resistors with near zero TCRs and extremely wide sheet resistance range of 93.34–1439.01 Ω/sq can be obtained.
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