Abstract
Polyisocyanide bearing oligothiophene pendants were used as an active layer in a nonvolatile resistive memory device. The current density current–voltage characteristics of the device showed nonvolatile memory behavior. The device exhibited a large ON/OFF ratio of 107 and a retention time of >4 × 104 under a read voltage of 0.5 V. The log J–V1/2 curves exhibit a good linear relationship in the OFF state, which suggests that the conduction mechanism in the OFF state obeys the thermionic emission model. In contrast, in the ON state, the current slope was 1.2 and the activation energy of ON state was ∼6 meV. These conductive features in the ON state could be attributed to charge conduction through filamentary pathways.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
