Abstract
Poly(vinylidene fluoride–trifluoroethylene) has been widely used as a dielectric of the ferroelectric organic field-effect transistor (FE-OFET) nonvolatile memory (NVM). Some critical issues, including low mobility and high operation voltage, existed in these FE-OFET NVMs, should be resolved before considering to their commercial application. In this paper, we demonstrated low-voltage operating FE-OFET NVMs based on a ferroelectric terpolymer poly(vinylidene-fluoride-trifluoroethylene-chlorotrifluoroethylene) [P(VDF-TrFE-CTFE)] owed to its low coercive field. By applying an ultraviolet-ozone (UVO) treatment to modify the surface of P(VDF-TrFE-CTFE) films, the growth model of the pentacene film was changed, which improved the pentacene grain size and the interface morphology of the pentacene/P(VDF-TrFE-CTFE). Thus, the mobility of the FE-OFET was significantly improved. As a result, a high performance FE-OFET NVM, with a high mobility of 0.8 cm2 V−1 s−1, large memory window of 15.4~19.2, good memory on/off ratio of 103, the reliable memory endurance over 100 cycles and stable memory retention ability, was achieved at a low operation voltage of ±15 V.
Highlights
P(VDF-TrFE) films were processed with dimethylformamide (DMF), 2-butanone (MEK), or cyclohexanone as a solvent in all previous reports, most likely due to its high solubility
We demonstrated a high mobility, low-voltage operating ferroelectric organic field-effect transistor (FE-OFET) nonvolatile memory (NVM) based on an ultraviolet-ozone (UVO) treating P(VDF-TrFE-CTFE) dielectric, which was spin-coated from a solution in butyl acetate
The I–V characteristics of the capacitor exhibited a low leakage current density of 10−7 A cm−2 at a voltage sweeping range of ±15 V (Fig. 2e), indicating a good electric insulator property in our P(VDF-TrFE-CTFE) film, which is required for the stable operation of a FE-OFET
Summary
The I–V characteristics of the capacitor exhibited a low leakage current density of 10−7 A cm−2 at a voltage sweeping range of ±15 V (Fig. 2e), indicating a good electric insulator property in our P(VDF-TrFE-CTFE) film, which is required for the stable operation of a FE-OFET. The linear mobility (μlin) was extracted using the conventional metal-oxide-semiconductor field-effect transistor mode described in equation 1, by the transconductance, gm, in the linear region according to equation 2,
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