Abstract
The temperature coefficient of resistance (TCR) for an as-deposited RuO2.2 thin film resistor changes from −131.6 to 1007.95 ppm/°C after the annealing at 600 °C for 30 min. Typically, a near zero TCR about 0±0.12 ppm/°C can be obtained after annealing at 300 °C for 30 min in an Ar ambient. The changes of TCR from negative to positive is attributed to the grain growth of RuOx films from fine grain (30–40 Å) to a larger one (500–800 Å) during the annealing process. Rutherford backscattering spectroscopy and in situ x-ray photoemission spectroscopy show that the ratio of O/Ru in the RuOx film decreases from 2.2 to 2.0, due to the out diffusion of oxygen during the annealing process, which is independent of the changes in TCR.
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