Abstract
For the first time, p-type doping through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas and then in pure nitrogen. The sheet concentration of the holes was estimated to be about 2 /spl times/ 10/sup 13/ cm/sup -2/ from Hall measurements. The structures of the samples annealed under different conditions were analyzed using high resolution X-ray diffractometry and Rutherford back scattering. The results showed that the crystal structure of the implanted region was almost restored after annealing, except for possibly some point defects.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
