Acetone cluster ion beam irradiation on solid surfaces

Abstract

Acetone cluster ions were produced by the adiabatic expansion method without using a support gas. The acceleration voltage of the acetone cluster ion beam was from 3 to 9kV. The sputter depths of silicon irradiated with acetone cluster ion beams increased with acceleration voltage and fluence of the acetone cluster ion beams. The sputter depth was close to that induced by the ethanol cluster ion beam accelerated at the same acceleration voltage. The sputtering yield of silicon by the acetone cluster ion beam at an acceleration voltage of 9kV was approximately 100times larger than that for an argon monomer ion beam at 9keV. The sputter depths of silicon dioxide irradiated with the acetone cluster ion beams were smaller than those of silicon, but larger than those induced by ethanol cluster ion beams. The XPS analysis of silicon surface indicated that the silicon surface was more strongly oxidized by the irradiation of acetone cluster ion beam than ethanol cluster ion beam.