Abstract
Photoluminescence wavelength emission of Ga x In 1− x As y P 1− y /InP heterostructures grown in multiwafer gas-source molecular-beam epitaxy (GSMBE) is studied in detail for both bulk and multiple quantum well (MQWs) heterostructures. Excellent photoluminescence wavelength uniformity is reported in 4×2-in. configuration, demonstrating the compatibility of GSMBE process with large-scale 1.55 μm telecom laser production. A strong dependence of wavelength uniformity on group-V/group-III flux ratio is reported and analyzed quantitatively. An empirical model based on the interplay between group-V elements incorporation and gas distribution is proposed to predict the influence of AsH 3 and PH 3 fluxes on As content in the solid. This understanding opens the way to an accurate tuning of wavelength dispersion of Ga x In 1− x As y P 1− y /InP MQWs grown in multiwafer GSMBE system.
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