Abstract
This paper proposes accurate CMOS device de-embedding and modeling methods. For millimeter-wave circuit design, accurate simulation models are required. For this reason, an accurate measurement is a key technique for device characterization, and de-embedding and modeling methods are also very important. In this work, a three-parameter pad model based on L-2L de-embedding method and a transistor model with frequency and bias dependency are proposed. The pad model is derived from the assumption that the capacitance of PADs becomes constant at high frequencies. In the transistor modeling, parasitic elements are extracted mathematically. A five-stage low-noise amplifier is fabricated by 65–nm CMOS technology to confirm the accuracy of simulation, and the simulation and measurement results match well with each other.
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