Abstract
This paper presents an X-band balanced Colpitts oscillator in GaN HEMT technology and a method to calculate its phase noise accurately. The method employs a low-frequency (LF) noise measurement and the oscillator waveforms from a harmonic-balance simulator. These data are post-calculated by Hajimiri's phase-noise model, in which the LF noise can be activated with a cyclo-stationary effect in the calculation of phase noise. Compared to commercial phase-noise simulation using predefined stationary noise, the calculation gives significantly improved phase-noise prediction in the 30-dB/decade region near carrier. The prediction is within 3-dB accuracy at 10-kHz, 100-kHz, and 1-MHz offset frequencies. In addition to the method used for phase-noise prediction, the potential for wideband tuning of this oscillator topology is analytically investigated. The measured phase noise of the oscillator is -102 dBc/Hz at 100-kHz offset from a 8.6-GHz carrier frequency for drain voltage and current of Vd=15 V and Id=40 mA.
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