Accurate Measurement of Silicide Specific Contact Resistivity by Cross Bridge Kelvin Resistor for 28 nm Complementary Metal–Oxide–Semiconductor Technology and Beyond

Abstract

In scaling down the device feature size, a reduction in parasitic resistance is inevitable in realizing a high-performance complimentary metal–oxide–semiconductor field-effect transistor. In particular, a reduction in specific contact resistivity between silicide and silicon diffusion layers under silicide in source/drain electrodes becomes increasingly important. In this paper, we focus on the measurement accuracy of the specific contact resistivity and the experimental evaluation of the state-of-the-art 28 nm technology. The measurement accuracy of the specific contact resistivity was examined by three-dimensional technology computer-aided design simulation. The results confirmed that the specific contact resistivity measurement resolution obtained by using the proposed modified cross-bridge Kelvin resistor is extended to 10-9 Ω cm2. We also found experimentally that the 28 nm technology realizes 1.1×10-8 and 7.8×10-9 Ω cm2 for n+ and p+ silicon diffusion layers in source/drain electrodes, respectively, by utilizing the test structure of cross-bridge Kelvin resistors, which are fully applicable to the 28 nm technology.