Abstract
A Ni–InAs source/drain nMOSFET is a promising future logic device. However, the specific contact resistivity, ρint, between InAs and Ni–InAs is difficult to evaluate accurately because of the complex junction structure. In this study, we develop a multi-sidewall transmission line method (MSTLM) for the measurement of low contact resistivity with high accuracy. The MSTLM enables us to simplify the junction interface structure in terms of the resistance analysis, to eliminate the effects of the contact metal and to perform statistical analyses to mitigate sample variations. The high accuracy of measurement of ρint is demonstrated by combining InAs-on-insulator (InAs-OI) substrates with the MSTLM. The evaluated ρint of (3.0 ± 0.9) × 10−8 Ω cm2 for InAs with an electron concentration of 2 × 1018 cm−3 is found to be in good agreement with the theoretically calculated value under a Schottky barrier height of 0 eV.
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