Abstract
Thin film single crystalline silicon solar cells were fabricated and minority carrier diffusion length was evaluated using two-dimensional simulation. Effective minority carrier diffusion length (L/sub eff/) in 19 /spl mu/m-thickness cell was obtained as 19 /spl mu/m by the surface photovoltage (SPV) method. Further, bulk minority carrier diffusion length (L/sub b/) was estimated to over 50 /spl mu/m from fitting for external quantum efficiency (EQE) using numerical simulation. In the case of L/sub b/ /spl ges/ cell thickness, L/sub eff/ estimated from SPV was limited to the thickness of the cell, and L/sub b/ could not be evaluated accurately. Therefore, fitting of EQE in the wide wavelength region by two-dimensional simulator was indispensable for accurate evaluation of minority carrier diffusion length in thin film single crystalline silicon solar cells.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call