Abstract
Accurate numerical calculations for the small-signal response of PN junctions containing deep-level carrier traps as a function of frequency and reverse-bias voltage are reported for the first time. Calculations for Au-doped Si PN abrupt and diffused junctions compare favorably to published experimental results if the room-temperature emission rates of Tasch and Sah, which leave the Au center only slightly negatively charged in the depletion region, are used. Inclusion of the electric field dependences of the emission rates improves the agreement between experiment and theory. It is demonstrated that ignoring the trapping of carriers which spill over from the more heavily doped side of an asymmetric junction causes some inaccuracies in the use of results from previously published approximate analyses.
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