Accurate and efficient TCAD model for the formation and dissolution of small interstitial clusters and {3 1 1} defects in silicon

Abstract

In recent years, physics-based models have been developed for the time evolution of defects formed by Si self-interstitials in ion-implanted Si. The accuracy of these models is crucial for a predictive process simulation of deep sub micron devices. However, the most complete models are usually not considered in applied process simulation, because they use too many equations. In this work, a new model is presented in which the essential physics behind the formation and dissolution of small interstitial clusters and {3 1 1} defects is described by a minimum set of five reaction equations. Three equations describe the kinetics of small interstitial clusters which governs the initial phase of implantation damage annealing. Two equations describe the formation and Ostwald ripening of {3 1 1} defects. The model is capable to reproduce experimental data over a wide range of implantation energies, doses and anneal temperatures. It allows predictive simulations of interstitial cluster kinetics at a minimum computational cost.