Accurate analytical model for effective carrier mobility of fully hydrogenated poly-si TFTs under White light illumination

Abstract

The effect of illumination on the effective carrier’s mobility of fully hydrogenated polycrystalline silicon TFT is investigated theoretically as well as experimentally. The polysilicon layers are deposited by LPCVD technique in the amorphous state and then crystallized by a low temperature thermal annealing. Experimental data show that the illumination affects the channel mobility only in the subthreshold region. Based on this, an analytical effective mobility model under illumination is established. The results show that the mobility under illumination follows the Meyer–Neldel rule (MNR). The proposed model is verified with the experimental data. A good agreement is obtained.