Abstract
This article presents a comprehensive analysis of nonlinear voltage-dependent capacitances of vertical silicon carbide power MOSFETs with lateral channel, focusing specifically on fast switching transients. The capacitance-voltage (C-V) device characteristics, (C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> , C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd</sub> , C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> ), being dependent on both V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> and V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> , are extracted by means of two-dimensional technology computer aided design simulations for a commercially available device in both off- and on-state modes. Different compact models for the power MOSFET are investigated, each employing a three interterminal capacitance model as typically used in power electronics. The performed analysis provides a detailed explanation for the importance of taking into account the dependence of C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd</sub> , C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> , and C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> on both of the voltages V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> and V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> . This is especially important for fast switching transients (in the range of 10 ns) in order to accurately predict switching losses, driver losses, current, and voltage slopes, as well as current and voltage delays. As direct measurements for C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd</sub> , C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> , and C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> in dependence of both V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> and V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> are highly demanding, the results presented in this article increase the understanding of both the underlying effects as well as of the tradeoffs between accuracy and computational complexity made by simplifying device models. In turn, this information is highly beneficial for enabling accurate and computationally efficient automated design procedures for power electronics.
Highlights
T HE INCREASING demands for electrification and highly efficient energy conversion are driving the adaption of wide bandgap power semiconductor devices in advanced power electronic (PE) systems [1]
Starting from a calibrated technology computer-aided design (TCAD) model of a commercially available Silicon carbide (SiC) power metaloxide-semiconductor field-effect transistors (MOSFETs) developed in-house [13], the main aim of this article is to evaluate the accuracy of power MOSFET compact models commonly used in power electronics for predictive modeling of fast switching operation, distinguishing the impact of the device C-V modeling, the I-V modeling, and the circuit layout modeling
The simulation time is not prioritized and the main focus is placed on the simulation accuracy, mainly on a quantitative determination of the errors made by employing specific modeling simplifications for predicting the dynamic behavior of fast switching power semiconductor devices such as SiC power MOSFETs, as shown below
Summary
T HE INCREASING demands for electrification and highly efficient energy conversion are driving the adaption of wide bandgap power semiconductor devices in advanced power electronic (PE) systems [1]. Starting from a calibrated TCAD model of a commercially available SiC power MOSFET developed in-house [13], the main aim of this article is to evaluate the accuracy of power MOSFET compact models commonly used in power electronics for predictive modeling of fast switching operation, distinguishing the impact of the device C-V modeling, the I-V modeling, and the circuit layout modeling The simplifications such as, e.g., constant gate-source capacitance [10] and single-voltage dependent OFF-state gate-drain and drain-source capacitance [3], [4] available in datasheets, are evaluated with respect to modeling accuracy.
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