Abstract
The effect of Cd-doping and annealing at different temperatures on the trap density in Cu 2O is considered. From space charge limited current (SCLC) measurements and Hall effect measurements it is demonstrated that there is a trap-band distribution in the area of the Fermi level, which always lies within the trap-band. For resistivities of the material higher than about 200 Ωcm the maximum of concentration of traps is located just above the Fermi level. For resistivities lower than about 200 Ωcm this maximum lies below the Fermi level. By fitting the experimental data to theory we calculated the parameters of the trap-band. Annealing of the samples in air at 500°C decreases the resistivity of the material by two orders of magnitude and at the same time the concentration of traps decreases. The trap-band width becomes narrower in these samples.
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