Abstract
The radiative recombination of quasi-two-dimensional electrons with photoexcited holes bound to acceptors is investigated in modulation-doped GaAs / Al x Ga 1–x As heterojunctions. With increase in temperature, a blue shift of about 2.5 meV is observed for a temperature change from 4 K to 40 K. Also, observed is a rapid decrease in intensity of its low energy peaks. This change in line shape of the acceptor-related emission in the GaAs / Al x Ga 1–x As heterojunctions is accounted for by the effect of band bending and the spatial distribution of acceptors.
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