Abstract
Silicon (Si) power devices have dominated power electronics because of their low-cost volume production, excellent starting material quality, ease of processing, and proven reliability. Although Si power devices continue to make significant progress, they are approaching their operational limits, primarily because of their relatively low bandgap and critical electric field, which result in high conduction and switching losses and in poor high-temperature performance. Si carbide (SiC) and gallium nitride (GaN) power devices are revolutionizing power electronics because of their favorable material properties, which allow for highly efficient power devices with a reduced form factor and reduced cooling requirements.
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