The Impact of Education in Accelerating Commercialization of Wide-Bandgap Power Electronics [Expert View

Abstract

Silicon (Si) power devices have dominated power electronics because of their low-cost volume production, excellent starting material quality, ease of processing, and proven reliability. Although Si power devices continue to make progress, they are approaching their operational limits, primarily because of their relatively low bandgap and critical electric field, which result in high conduction and switching losses and in poor high-temperature performance. Silicon carbide (SiC) and gallium nitride (GaN) devices are revolutionizing power electronics because of their favorable material properties, which allow for highly efficient power devices with a reduced form factor and reduced cooling requirements. Although wide-bandgap (WBG) power devices have now advanced well past the proof-of-concept stage and are commercially available in a variety of voltage and current ratings, their widespread commercialization has been slow, primarily due to their high cost relative to their Si counterparts and concerns about their reliability.