Abstract

Abstract The first-year degradation rate of P max (degradation in 1 year) and the seasonal behaviour of amorphous silicon photovoltaic modules are very important for the design of PV systems using them and for R&D of a-Si PV modules with small degradation and high stabilized efficiency. It is profitable to estimate them in a short time. We obtained accurate degradation data from periodical measurements using a solar simulator at standard test condition (STC) and we have analyzed aoutdoor exposure test data at Setagaya site in Tokyo. Paying attention to two main stresses of light intensity and sample temperature for electrical parameters of a-Si PV modules, we tried to establish a constant-stress accelerated degradation test method for a-Si PV modules by using a light-temperature combined accelerated test chamber and studied an applicability of light soaking.

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