Abstract
The absorption spectral characteristics of silicon dioxide films in the IR range (λ = 8–14 µm) were studied to determine the optimal absorber thickness in the matrix structure of Golay microcells in order to design highly sensitive IR detectors. It is shown that the absorbance spectrum of SiO2 films deposited by electron-beam evaporation has a multipeak structure in the thickness range up to 2 µm and differs from the known absorption spectra of bulk silicon dioxide, which is apparently due to rearrangements in the film stoichiometry at the initial stages of film formation. Experiments have shown that the integrated absorption in deposited films in a given spectral range is close to a linear dependence on thickness and an order of magnitude smaller than the value obtained by calculation based on literature data for bulk SiO2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Optoelectronics, Instrumentation and Data Processing
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
