Abstract
We have studied absorption saturation characteristics in short-period GaAs AlAs superlattice self-electro-optic effect devices based on Wannier-Stark localization. The disappearance of negative differential resistances due to absorption saturation was observed under high optical excitation intensities. To understand the mechanism, we measured the time-resolved photocurrent and time-resolved photoluminescence. Results revealed that the absorption saturation is caused by electric field screening originating from the space-charge of remaining holes due to effective mass filtering.
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