Abstract
Absorption of THz radiation in gallium arsenide (GaAs) substrates of photoconductive antennas determines the generation and detection efficiency, as well as the dynamic and frequency ranges, of THz spectrometers. Based on the THz and IR experimental data and their calculations using classical dispersion models, absorption processes in the THz–IR regions were analyzed, and broadband data on the temperature evolution of the optical parameters of GaAs substrates were obtained. The contribution of anharmonicity effects in the formation of the dielectric response function of GaAs in the THz range is demonstrated.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
