Abstract
Abstract: Top optical quality nonlinear gallium selenide crystals doped with different sulfur concentrations (1.1, 2.5, 5, 7, 11 mass%) are grown by modified Bridgman method. Physical origins of inaccuracy in the measurement of THz o- and e-wave absorption spectra by THz-TDS are identified. Dominant absorption for o-wave is established for all crystal compositions. Frequency independent absorption within 0.3-2 THz is demonstrated. Phonon mode transformation is studied in detail. Phonon absorption peak for e-wave centered at 1.1 THz is recorded for the first time. It is shown that e-wave THz generation is preferable in GaSe:S (2.5-5 mass%) crystal.
Published Version
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