Abstract

The Mn-doped ZnS nanoparticles with Mn content of 0–15 mol% were synthesized by a hydrothermal method from the solutions Zn(CH3COO)2 0.1 M, Mn(CH3COO)2 0.01 M, and Na2S2O3 0.1 M at 220°C for 15 h. These nanoparticles presented the cubic structure with average particle size about 16 nm. The yellow-orange photoluminescence (PL) band at 586 nm was attributed to the radiation transition of the electrons in 3d5 unfilled shell of Mn2+ ions [4T1(4G)-6A1(6S)] in ZnS matrix. The photoluminescence excitation (PLE) spectra monitored at the yellow-orange band, the absorption spectra also showed the near band edge absorption of 336–349 nm and the characteristic absorption bands of Mn2+(3d5) ions at 392, 430, 463, 468, 492, and 530 nm. These bands should be attributed to the absorption transitions of 3d5 electrons from the ground state 6A1(6S) to the excited states 4E(4D), 4T2(4D), 4A1(4G)-4E(4G), 4T2(4G), and 4T1(4G) of Mn2+ ions. The intensity of PL band and absorption bands of Mn2+(3d5) ions also increased with the Mn content from 0.1 to 9 mol%, but their peak positions were almost unchanged. The PLE spectra showed clearly the energy level splitting of Mn2+ ions in ZnS crystal field and allowed for the calculation of the splitting width between the excited states 4A1(4G), 4E(4G) about of 229 cm−1 (28.6 meV), and the Racah parameters B=559 cm−1, C=3202 cm−1 (γ=C/B=5.7), and the crystal field strength Dq=568 cm−1. The PL spectra with different excitation wavelengths corresponding to absorption transition bands of the PLE spectra allow for the discussion of the indirect and direct excitation mechanisms of Mn2+(3d5) ions in the ZnS crystal.

Highlights

  • In the Mn-doped A2B6 semiconductor crystals such as ZnS, ZnSe, and CdTe the energy levels 6S, 4G, 4P, and 4D of Mn2+ ions with a 3d5 unfilled electronic shell (called the Mn2+(3d5) configuration) are splitted into the multiple levels 6A1(6S), 4T1(4G), 4T2(4G), 4E(4G), 4A1(4G), 4T2(4D), and 4E(4D) under the crystal field of the host matrix

  • We systematically study the effect of Mn content on the absorption and radiation transitions of electrons in the Mn2+(3d5) configuration of

  • The Racah parameters B, C and the crystal field strength Dq are calculated from the experimental results, and the discussions are presented about the excitation mechanism of Mn2+(3d5) ions in the ZnS

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Summary

Introduction

In the Mn-doped A2B6 semiconductor crystals such as ZnS, ZnSe, and CdTe the energy levels 6S, 4G, 4P, and 4D of Mn2+ ions with a 3d5 unfilled electronic shell (called the Mn2+(3d5) configuration) are splitted into the multiple levels 6A1(6S), 4T1(4G), 4T2(4G), 4E(4G), 4A1(4G), 4T2(4D), and 4E(4D) under the crystal field of the host matrix. The Racah parameters B, C and the crystal field strength Dq are calculated from the experimental results, and the discussions are presented about the excitation mechanism of Mn2+(3d5) ions in the ZnS crystal at the increasing Mn content based on the dependence of PL spectra on excitation wavelengths

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