Abstract
Abstract We have investigated the effect of Auger and photoelectrons on the resolution of x-ray lithography by comparing exposures made in PMMA with CK, CuL, and AlK x-rays. For all three wavelengths the same high-contrast mask was used, and in each case a 30nm-linewidth mask pattern was faithfully replicated without apparent linewidth reduction. These experimental results, which are at variance with numerous published assumptions and predictions concerning the effect of photoelectrons on pattern replication, are consistent with the Monte Carlo calculation of Murata (1985) which shows that energy dissipation falls off by 3dB at 5nm from the point of x-ray absorption.
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