Abstract
Systematic in situ XPS measurements on molecular beam epitaxially grown AlAs/GaAs (AlAs grown on GaAs) and reversed GaAs/AlAs heterojunctions have revealed that the growth sequence dependence of the heterojunction valence band discontinuity ΔE v is a measurement artifact. This artifact arises from the strong surface band bending caused by the heavy doping. By reduction of doping, thereby reducing the effect of band bending, commutativity (i.e. no growth sequence dependence) of ΔE v in the GaAs-AlAs system is shown to be satisfied within the experimental error.
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