Abstract
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> An abrupt pulse-doped InP/GaInAs/InP double heterojunction bipolar transistor having a 0.45- <formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula>-wide T-shaped emitter metal is reported. These two promising technologies for sub-100-nm emitters were previously demonstrated only for 1-<formula formulatype="inline"> <tex Notation="TeX">$\mu\hbox{m}$</tex></formula> emitters. The device exhibited typical dc and microwave performance to 0.5- <formula formulatype="inline"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> emitter devices. </para>
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