Abstract
An above-barrier localized excitonic state in a Bragg confining semiconductor superstructure based on an (In, Ga)As/GaAs heterosystem is observed experimentally. A sharp excitonic resonance corresponding to the interference mechanism of localization is observed in the absorption spectrum of this structure at 1.548 eV, i.e., 33 meV above the energy of a bulk exciton in GaAs. The oscillator strength of the above-barrier exciton is twice that of the main excitonic state in the system, and the above-barrier exciton gives rise to sharp Landau oscillations in the magnetoabsorption spectra.
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