Abstract
A mathematical model of primary grown-in microdefects formation is proposed. The model is built on the basis of the dissociative process of diffusion. Here, we study the interaction patterns between oxygen-vacancy (O + V) and carbon-interstitial (C + I) near the crystallization front in dislocation-free silicon monocrystals grown by float-zone and Czochralski methods. As shown here, the approximate analysis formulas obtained tally with the heterogeneous mechanism of grown-in microdefects formation.PACS Nos.: 61.72Bb, 61.72.Jj, 61.72.Yx
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