Grown-in defects in silicon produced by agglomeration of vacancies and self-interstitials

Abstract

Abstract Grown-in microdefects in dislocation-free silicon are distributed in banded patterns that result from a spatial variation in the type and concentration of the incorporated point defects: vacancies (at V/G larger than some critical value) or self-interstitials otherwise ( V is the growth rate, G is the axial temperature gradient). The incorporated point defects agglomerate into microdefects upon lowering the temperature; particularly the vacancies are agglomerated into voids. Oxygen in Czochralski crystals plays an important role by assisting the void formation, by producing joint vacancy-oxygen agglomerates (oxide particles) and by trapping vacancies into VO 2 species.