Abstract
AbstractThe conjunction between electrical and optical phenomena in p‐type heavily doped silicon at room temperature is investigated, based on our accurate empirical models for the band‐gap narrowing, apparent band‐gap narrowing, and unperturbed Fermi energy shift. The numerical results of optical band gap, reduced interacting Fermi energy, and reduced interacting density‐of‐valence band states effective mass are presented and compared with other theoretical results and experiments. It is concluded that, taking into account the unperturbed Fermi energy shift effect, the values of band‐gap narrowing, obtained from electrical and optical phenomena, are found to be the same, removing the disagreements or discrepancies in theoretical and experimental values of band‐gap narrowing existing so far in the literature.
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