Abstract
Structural changes in silicon in depths exceeding the ion ranges at ion bombardment are studied by X-ray diffractometry, microhardness measurement, and selective chemical etching. The data obtained point to the presence of vacancy type defects in the layer extending up to a depth of 1 to 1.5 μm and of a region below (up to 3 to 5 μm) with prevalence of interstitial type defects. Still more deeply locates the region where annihilation of the grown-in clusters takes place. A thin region near the back side of the sample is enriched with defects of apparently interstitial type. Some possible mechanisms for the abnormally deep structural changes at ion implantation are suggested. [Russian Text Ignored].
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