Abstract
We have studied the photoluminescence properties of GaN nanorods grown onSi(111) substrates by radio-frequency plasma-assisted molecular-beam epitaxy. Thehexagonal shaped nanorods with lateral average diameters from 30 to 150 nmare obtained by controlling the Ga flux with a fixed amount of nitrogen. As thediameters decrease, the main emission lines assigned as donor bound excitonsare blueshifted, causing a spectral overlap of this emission line with that of thefree exciton at 10 K due to the quantum size effect in the GaN nanorods. Thetemperature-dependent photoluminescence spectra show an abnormal behaviourwith an ‘S-like’ shape for higher diameter nanorods. The activation energy ofthe free exciton for GaN nanorods with different diameters was also evaluated.
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