Abstract
The Al3Ti intermetallic compound (IMC) layer growth kinetics at Al-Ti interface was investigated. Surprisingly an abnormal effect of temperature was observed with a thicker IMC layer formed at lower annealing temperature due to the much faster Al3Ti grain coarsening at a higher temperature, the IMC layer growth at 630 °C became slower than that at 600 °C after a certain annealing time. The quantitative influence of grain size on effective diffusion coefficient was analysed. Calculations showed that the lattice diffusion makes little contribution to the effective diffusion coefficient. Grain boundary diffusion, therefore, dominates for all the annealing conditions studied.
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