Abstract
Abstract Dopants have a great effect on the phase transition behavior and the properties of the ferroelectrics. Here we report an abnormal Curie temperature ( T c ) behavior and enhanced strain property by controlling the doping site of Ce ions in the BaTiO 3 ceramics. The Ce doped A-site and B-site BaTiO 3 ceramics (BT-xCe-A and BT-xCe-B, x=2, 4, 6, 8 mol%) were prepared by a conventional solid state reaction method through a different sintering temperature. The Raman test and the XPS results give evidence that Ce is successfully incorporated into Ba-site as Ce 3+ in the BT-xCe-A samples, and into Ti-site as Ce 4+ in the BT-xCe-B samples. Different doping sites have distinct phase transition behavior. Compared with the BT-xCe-A ceramics, the BT-xCe-B ceramics show higher T c , and the T c show abnormal increasing behavior with the increase of the Ce content. In the Ce doped BaTiO 3 system, this phenomenon has not been reported before. The origin of the higher T c and its increasing behavior is discussed from the viewpoint of the larger local strain field generated by the Ce 4+ ions entering into B-site. Besides, the BT-xCe-B ceramics show a stronger diffuse phase transition behavior. The reason is considered that the Ce substituting B-site leads to a multiphase coexistence, which induces more frustration states for the polarization according to the random defect field theory. Due to such distinct phase transition behavior, the BT-xCe-B ceramics show the enhanced maximum polarization ( P max ) and enhanced strain properties compared with the BT-xCe-A ceramics. This work may provide a promising way to design high performance materials by controlling the substituting site of the dopant in other lead-free systems.
Published Version
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