Abnormal anti-Stokes Raman scattering and coherent backscattering as manifestation of Anderson localization of light in nonlinear mesoscopic materials

Abstract

We demonstrate that under continuous single-beam excitation, one can generate an abnormal anti-Stokes Raman emission (AASRE) whose properties are similar to a coherent anti-Stokes Raman scattering. The effect has been observed in mesoscopic materials, which possess intrinsically nonlinear properties [lithium niobate (LiNbO3), bismuth germanium oxide (Bi12GeO20; BGO), bismuth silicon oxide (Bi12GeO20; BSO)], which have a nonzero electric susceptibility of the third order, χ(3)≠0. Corroborated Raman and coherent backscattering studies demonstrate that the occurrence of both effects is conditioned by the existence of a mesoscopic morphology of the sample, which is able to ensure efficient transport of the light inside the sample through a multiple light scattering mechanism. In this context, both AASRE and coherent backscattering effects are because of the Anderson localization of the light.