Abstract
Results of ab initio UHF and SWXα calculations concerning the geometrical and electronic properties of the GeF3 and SiF3 radicals are presented. Comparison of the theoretical estimates of inversion barriers, ionization potentials and electron affinities obtained for three XF3 radicals (X=Ge, Si, C) is made.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Zeitschrift für Physik D: Atoms, Molecules and Clusters
Paper Title
Journal
Date
