Abstract
Ab initio UHF and SW xα calculations have been performed on the SiCl 3 and GeCl 3 radicals. Geometrical structures and inversion barriers were predicted from ab initio calculations, and ionization potentials, electron affinities and electronegativities were obtained via the SW Xα method. Changes in geometrical and electronic properties along the series (XCl 3; X = C, Si, Ge) are discussed.
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