Ab initio quantum transport simulations of monolayer GeS nanoribbons

Abstract

Monolayer germanium monosulfide (GeS) was recently identified as one of the most promising 2D materials for ultra-scaled FETs. While sub-10 nm monolayer GeS FETs were studied by quantum transport, very little is known about GeS nanoribbons (GeSNRs) or GeSNR FET performance. In this work, we employ quantum transport and Hamiltonians with an orbital resolution to study the electronic, transport, and ballistic device properties of sub-4 nm-wide and ∼15 nm-long GeSNRs. While ultra-scaled GeSNR FETs exhibit ION/IOFF of at least ∼7×105, indicating good switching performance, they also offer modest ballistic ION values of up to ∼1.2 mA/μm.